题目：

1、Ultra-Fast Optoelectronics for Supercomputing Applications
2、WSN-enabled Services: Platform and Applications

报告人：郑克勇、金仲达 台湾清华大学
地点：东五楼二楼210学术报告厅
时间：6月17日上午9:00

报告摘要：
　　1、The demonstration of ultra-fast optoelectronic interconnect systems with a speed of 100Gb/s requires the ability to design, fabricate, and integrate ultra-high-speed light sources with detectors and driver circuits. However, in conventional diode lasers used for optical communications, the time required in completing the injection and recombination process limits the maximum direct modulation speed to below 30GHz. The speed of injection and recombination processes is a function only of the materials used, and imposes a fundamental physical limit on modulation speeds of conventional laser diodes. As a result, advances in high-speed laser performance have slowed to a crawl in the last decade as today’s device structures bump up against that limit. In this talk, the development of ultra-high speed (>50GHz) optoelectronic interconnect systems using a revolutionary ultra-fast light-emitting transistor (LET) design which could be directly modulated at a speed near THz will be discussed. Recent breakthroughs and new developments toward optical supercomputing technologies will be highlighted.
　　2、will first describe the scope of the project, followed by the wireless sensor platforms that we have developed. The second part of the talk will focus on a number of WSN-enabled applications and discuss the experiences that we have learned.

郑克勇教授简介：
　　Professor Cheng received the B.S. degree in Electrical Engineering from Chung-Cheng Institute of Technology, Taiwan, Republic of China in 1969 and the M.S. and Ph.D. degrees in Electrical Engineering from Stanford University, Stanford, California in 1972 and 1975, respectively.
　　From 1975 to 1979, he was a faculty member with the Department of Electrical Engineering, Chung-Cheng Institute of Technology in Taiwan. In 1979, he joined Dr. A. Y. Cho’s group at Bell Laboratories, Murray Hill, NJ, where he began research in molecular bean epitaxy (MBE) technology. His research in this area led to the development of rotating substrate holder for uniform MBE growth, the enhancement of electron mobility in modulation doped GaInAs/AlInAs/InP heterostructures, and the first demonstration of GaInAs/AlInAs/InP HEMT. The rotating sample holder design becomes an indispensable component of MBE systems and is now a standard feature of every modern production MBE system. Presently, the MBE grown GaInAs/AlInAs HEMTs exhibit the best overall performance with fT ≥ 520 GHz / fmax ≥ 1.2 THz and are extensively studied and widely used.
From 1987 to 2010, he was a professor of the Electrical and Computer Engineering Department at the University of Illinois at Urbana-Champaign (UIUC). From 2000 to 2004, he was the Director of the Bio-Optoelectronic Sensor Systems (BOSS) Center. The BOSS Center was a consortium of seven universities and sponsored by DARPA. In 2004, he became the Director of the Hyper-Uniform Nanophotonic Technologies (HUNT) for Ultra-Fast Optoelectronic Systems Center. The HUNT Center is a consortium of the University of Illinois, Columbia University, Georgia Tech and Harvard University, and sponsored by DARPA under the University Photonics Research Centers program. The focus of the HUNT Center is to accomplish ultra-high (> 40 GHz) optoelectronic interconnect systems using a revolutionary ultra-fast transistor laser design, incorporated with quantum wells and quantum dots in the base region, which could be directly modulated at a speed beyond THz. At UIUC, he made further contributions to the compound semiconductors including the first demonstration of dilute nitride III-V-N (GaP1-xNx) compound semiconductors, the invention of quantum wire heterostructure lasers using discovered strain-induced lateral layer ordering (SILO) process, and the demonstration of the world fastest double heterojunction bipolar transistor (DHBT) (fT ≥650GHz) using GaAsSb/InP type-II heterostructures. His pioneering work of the first observation of the dramatic bandgap energy bowing in dilute III-V-N compound semiconductors has led a great deal of follow-up research on similar material systems including the arsenic-rich Ga(In)AsN compounds currently being pursed at many major research groups. In August 2010, he moved to the National Tsinghua University (NTHU) in Taiwan as the Dean of the College of Electrical Engineering and Computer Science. Currently, he holds the Ho Chin Tui Chair of Electrical Engineering at NTHU. His current research interests are in the areas of in situ fabrication of low-dimensional optoelectronic materials and devices, novel high-speed optoelectronic devices, and the development of mid-IR optoelectronic devices. He has published more than 200 technical papers on compound semiconductor materials and devices.
　　Dr. Cheng is a Fellow of IEEE and a Fellow of the American Association for the Advancement of Science (AAAS). In 2007, he received MBE Innovator Award from North American MBE Conference for his extraordinary contributions to the research and development of MBE technology for device applications. He is also a recipient of the 2011 Outstanding Research Award from Pan Wen Yuan Foundation.

金仲达教授简介：
　　Prof. Chung-Ta King received the B.S. degree in electrical engineering from National Taiwan University, Taiwan, R.O.C., in 1980, and the M.S. and Ph.D. degrees in computer science from Michigan State University, East Lansing, Michigan, in 1985 and 1988, respectively. From 1988 to 1990, he was an assistant professor of computer and information science at New Jersey Institute of Technology, New Jersey. In 1990, he joined the faculty of the Department of Computer Science, National Tsing Hua University, Taiwan, where he is currently a professor and the chair of the department. His research interests include parallel and distributed processing and networked embedded systems.